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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION With TO-3PN package High voltage switching transistor APPLICATIONS For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 900 Collector-base voltage Open emitter Collector-emitter voltage Open base 600 7 Emitter-base voltage Open collector Collector current 14 Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 28 7 130 150 -55~150 UNIT V V V A A A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4706 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance CONDITIONS IC=10mA ; IB=0 VCB=800V; IE=0 VEB=7V; IC=0 IC=7A ; VCE=4V IC=7A ; IB=1.4A IC=7A ; IB=1.4A VCE=12V;IE=-1.5A VCB=10V;f=1MHz 6 160 10 MIN 600 0.1 0.1 25 0.5 1.2 V V MHz pF TYP. MAX UNIT V mA mA SYMBOL V(BR)CEO ICBO IEBO hFE VCE(sat) VBE(sat) fT COB Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 1.0 IC=7A;RL=35.7| IB1=1.05A;IB2=-3.5A VCC=250V 5.0 |I Fall time 0.7 |I s s |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4706 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4706 TOR NDU ICO E SEM ANG INCH 4 |
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